Reduction of Leakage Power using Stacking Power Gating Technique in Different CMOS Design Style at 45Nanometer Regime
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چکیده
منابع مشابه
Reduction of Leakage Power using Stacking Power Gating Technique in Different CMOS Design Style at 45Nanometer Regime
As transistor sizes scale down and levels of integration increase, leakage power has become a vital downside in modern low-power VLSI technology. This is often very true for ultra-lowvoltage (ULV) circuits, wherever high levels of leakage force designers to selected relatively high threshold voltages, which limits performance. In this paper, we design different design approach of master slave D...
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ژورنال
عنوان ژورنال: International Journal of Computer Applications
سال: 2013
ISSN: 0975-8887
DOI: 10.5120/14411-2497