Reduction of Leakage Power using Stacking Power Gating Technique in Different CMOS Design Style at 45Nanometer Regime

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Reduction of Leakage Power using Stacking Power Gating Technique in Different CMOS Design Style at 45Nanometer Regime

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ژورنال

عنوان ژورنال: International Journal of Computer Applications

سال: 2013

ISSN: 0975-8887

DOI: 10.5120/14411-2497